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RF Device Data
Freescale Semiconductor
MRF1517NT1
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD
> 50 %.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency, and device stability.
Figure 29. Series Equivalent Input and Output Impedance
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD
> 50 %.
f
MHz
Zin
Ω
ZOL*
Ω
440 1.62 +j3.41 3.25 +j0.98
Zin
= Complex conjugate of source
impedance.
ZOL* = Complex conjugate of the load
impedance at given output
power, voltage, frequency,
and ηD
> 50 %.
VDD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
460 1.85 +j3.35 3.05 +j0.93
480 1.91 +j3.31 2.54 +j0.84
f
MHz
Zin
Ω
ZOL*
Ω
480 1.06 +j1.82 3.51 +j0.99
VDD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
500 0.97 +j2.01 2.82 +j0.75
520 0.975 +j2.37 1.87 +j1.03
f
MHz
Zin
Ω
ZOL*
Ω
400 1.96 +j3.32 2.52 +j0.39
420 2.31 +j3.56 2.61 +j0.64
440 1.60 +j3.45 2.37 +j1.04
520
Zo
= 10
Ω
Zin
f = 480 MHz
400
Zo
= 10
Ω
Zin
f = 440 MHz
ZOL*
480
Zo
= 10
Ω
Zin
f = 440 MHz
ZOL*
ZOL*
f = 440 MHz
400
VDD
= 7.5 V, I
DQ
= 150 mA, P
out
= 8 W
440
f = 480 MHz
f = 480 MHz
520
Zin
ZOL*
Input
Matching
Network
Device
Under Test
Output
Matching
Network
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相关代理商/技术参数
MRF1517NT1 制造商:Freescale Semiconductor 功能描述:Transistor
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MRF1518NT1 功能描述:射频MOSFET电源晶体管 RF LDMOS FET PLD1.5N RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF1518NT1_06 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor
MRF1518NT1_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor